This silicon transient voltage suppressor diode features a maximum reverse voltage of 280V and a maximum non-repetitive peak reverse power dissipation of 30000W. The device has a bidirectional polarity and is constructed from a single element. It is suitable for use in applications requiring transient voltage suppression. The diode is packaged in a 1-pin R-PSSO-G1 package type and is designed for surface mount applications.
PolarityBIDIRECTIONAL
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Technical Specifications
Microchip MXLPLAD30KP280CA technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 280 |
| Breakdown Voltage-Min | 311 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 451 |
| Breakdown Voltage-Nom | 328 |
| Breakdown Voltage-Max | 345 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | No |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Microchip MXLPLAD30KP280CA Datasheet
Download the complete datasheet for Microchip MXLPLAD30KP280CA to view detailed technical specifications.
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