Microchip
MXLPLAD30KP350AE3
Trans Voltage Suppressor Diode, 30000W, 350V V(RWM), Unidirectional, 1 Element, Silicon
PolarityUNIDIRECTIONAL
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Technical Specifications
Microchip MXLPLAD30KP350AE3 technical specifications.
General
Number of Terminals
1
Terminal Position
SINGLE
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
350
Breakdown Voltage-Min
389
Non-rep Peak Rev Power Dis-Max
30000
Clamping Voltage-Max
564
Breakdown Voltage-Nom
410
Breakdown Voltage-Max
431
Power Dissipation-Max
2.5
Compliance
RoHS
Yes
REACH
Compliant
Military Spec
False
Datasheet
Microchip MXLPLAD30KP350AE3 Datasheet
Download the complete datasheet for Microchip MXLPLAD30KP350AE3 to view detailed technical specifications.
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