This SILICON transient voltage suppressor diode features a maximum reverse voltage of 75V and a minimum breakdown voltage of 83.3V. It can handle a maximum non-repetitive peak reverse power dissipation of 30kW and a maximum clamping voltage of 121V. The diode is constructed with a SILICON material and has a maximum power dissipation of 2.5W. It is available in a R-PSSO-G1 package type.
PolarityBIDIRECTIONAL
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Technical Specifications
Microchip MXLPLAD30KP75CA technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 75 |
| Breakdown Voltage-Min | 83.3 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 121 |
| Breakdown Voltage-Nom | 87.7 |
| Breakdown Voltage-Max | 92.1 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | No |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Microchip MXLPLAD30KP75CA Datasheet
Download the complete datasheet for Microchip MXLPLAD30KP75CA to view detailed technical specifications.
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