This silicon transient voltage suppressor diode features a breakdown voltage of 222V to 245V and a maximum non-repetitive peak reverse power dissipation of 30kW. The clamping voltage is maximally 322V. The device is suitable for use in applications requiring bidirectional polarity and has a maximum power dissipation of 2.5W. It is packaged in a R-PSSO-G1 type package.
PolarityBIDIRECTIONAL
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Technical Specifications
Microchip MXPLAD30KP200CA technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 200 |
| Breakdown Voltage-Min | 222 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 322 |
| Breakdown Voltage-Nom | 233.5 |
| Breakdown Voltage-Max | 245 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | No |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Microchip MXPLAD30KP200CA Datasheet
Download the complete datasheet for Microchip MXPLAD30KP200CA to view detailed technical specifications.
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