
Single-channel MOSFET gate driver with 9A peak output current, designed for surface mounting in a SOIC package. Features a 4.5V to 18V operating voltage range and a maximum power dissipation of 750mW. Offers a 60ns propagation delay and 60ns fall time, with a low input bias current of 10µA. This RoHS compliant component operates from -40°C to 85°C.
Microchip TC4422ESM technical specifications.
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