Surface mount dual-channel N-channel and P-channel power MOSFET with 200V drain-to-source breakdown voltage and 7-ohm drain-to-source resistance. Features 2A continuous drain current, 2V threshold voltage, 110pF input capacitance, 10ns turn-on delay, 15ns fall time, and 20ns turn-off delay. Operates from -55°C to 150°C. Packaged in SOIC on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL, N-CHANNEL
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Technical Specifications
Microchip TC6320TG-G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 7R |
| Fall Time | 15ns |
| FET Type | N and P-Channel |
| Height | 1.65mm |
| Input Capacitance | 110pF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3300 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL, N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.002998oz |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TC6320TG-G Datasheet
Download the complete datasheet for Microchip TC6320TG-G to view detailed technical specifications.
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