Surface mount dual-channel N-channel and P-channel power MOSFET with 200V drain-to-source breakdown voltage and 7-ohm drain-to-source resistance. Features 2A continuous drain current, 2V threshold voltage, 110pF input capacitance, 10ns turn-on delay, 15ns fall time, and 20ns turn-off delay. Operates from -55°C to 150°C. Packaged in SOIC on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL, N-CHANNEL
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Technical Specifications
Microchip TC6320TG-G technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
7R
Fall Time
15ns
FET Type
N and P-Channel
Height
1.65mm
Input Capacitance
110pF
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3300
Packaging
Tape and Reel
Polarity
P-CHANNEL, N-CHANNEL
Radiation Hardening
No
Rds On Max
7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.002998oz
Width
3.9mm
Compliance
RoHS
Compliant
Datasheet
Microchip TC6320TG-G Datasheet
Download the complete datasheet for Microchip TC6320TG-G to view detailed technical specifications.
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