N-channel small signal MOSFET in a TO-92 package, featuring a continuous drain current of 350mA and a drain-to-source breakdown voltage of 60V. This through-hole component offers a low drain-to-source resistance of 3 Ohms, with turn-on delay time of 2ns and fall time of 3ns. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip TN0106N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
350mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
3R
Fall Time
3ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
60pF
Lead Free
Lead Free
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
3R
RoHS Compliant
Yes
Turn-Off Delay Time
6ns
Turn-On Delay Time
2ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN0106N3-G Datasheet
Download the complete datasheet for Microchip TN0106N3-G to view detailed technical specifications.
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