
N-channel small signal JFET in a TO-92 package, featuring a 200V drain-to-source breakdown voltage and 250mA continuous drain current. This through-hole component offers a low 6 Ohm drain-to-source resistance (Rds On Max) and a 1W maximum power dissipation. Key switching characteristics include a 10ns turn-on delay and 20ns fall time, with an input capacitance of 150pF. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant device is supplied in bulk packaging.
Microchip TN0620N3-G technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 250mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 6R |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 150pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 6R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.00776oz |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip TN0620N3-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.