N-channel, small-signal JFET transistor in a SOT-23 package. Features 60V drain-to-source breakdown voltage and 280mA continuous drain current. Offers a low 2.5 Ohm drain-to-source resistance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 360mW. Ideal for surface mount applications.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power360mW
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Technical Specifications
Microchip TN2106K1-G technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 280mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2.5R |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 50pF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.050717oz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TN2106K1-G Datasheet
Download the complete datasheet for Microchip TN2106K1-G to view detailed technical specifications.
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