N-channel, small-signal JFET transistor in a SOT-23 package. Features 60V drain-to-source breakdown voltage and 280mA continuous drain current. Offers a low 2.5 Ohm drain-to-source resistance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 360mW. Ideal for surface mount applications.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power360mW
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Technical Specifications
Microchip TN2106K1-G technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
280mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
2.5R
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
50pF
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
360mW
Radiation Hardening
No
Rds On Max
2.5R
Turn-Off Delay Time
6ns
Turn-On Delay Time
3ns
Weight
0.050717oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN2106K1-G Datasheet
Download the complete datasheet for Microchip TN2106K1-G to view detailed technical specifications.
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