MICROCHIP

TN2106N3-G

Datasheet

Microchip

TN2106N3-G

Name: TN2106N3-G Microchip
Brand: Microchip
SKU: TN2106N3-G

60V 300mA N-CH JFET TO-92 Through Hole

N-channel small signal MOSFET in a TO-92-3 package, featuring a continuous drain current of 300mA and a drain-to-source breakdown voltage of 60V. This through-hole mounted component offers a low drain-to-source resistance of 2.5 Ohms, with fast switching speeds including a 3ns turn-on delay and 5ns fall time. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 740mW and an input capacitance of 50pF.

PackageTO-92-3

MountingThrough Hole

PolarityN-CHANNEL

Power740mW

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Technical Specifications

Microchip TN2106N3-G technical specifications.

General

Package/Case	TO-92-3
Continuous Drain Current (ID)	300mA
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	2.5R
Fall Time	5ns
Gate to Source Voltage (Vgs)	20V
Height	5.33mm
Input Capacitance	50pF
Length	5.21mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	740mW
Mount	Through Hole
Number of Channels	1
Package Quantity	1000
Packaging	Bulk
Polarity	N-CHANNEL
Power Dissipation	740mW
Rds On Max	2.5R
RoHS Compliant	Yes
Turn-Off Delay Time	6ns
Turn-On Delay Time	3ns
Weight	0.016oz
Width	4.19mm