N-channel small signal MOSFET in a TO-92-3 package, featuring a continuous drain current of 300mA and a drain-to-source breakdown voltage of 60V. This through-hole mounted component offers a low drain-to-source resistance of 2.5 Ohms, with fast switching speeds including a 3ns turn-on delay and 5ns fall time. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 740mW and an input capacitance of 50pF.
PackageTO-92-3
MountingThrough Hole
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Microchip TN2106N3-G technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
300mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
2.5R
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
50pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
740mW
Rds On Max
2.5R
RoHS Compliant
Yes
Turn-Off Delay Time
6ns
Turn-On Delay Time
3ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN2106N3-G Datasheet
Download the complete datasheet for Microchip TN2106N3-G to view detailed technical specifications.
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