N-channel power MOSFET featuring 250V drain-to-source breakdown voltage and 480mA continuous drain current. This surface-mount component offers a low 3.5-ohm drain-to-source resistance. Key electrical characteristics include a 20V gate-to-source voltage, 200pF input capacitance, and fast switching times with a 5ns turn-on delay. Housed in a SOT-89 package, it supports a maximum power dissipation of 1.6W and operates across a temperature range of -55°C to 150°C.
PackageSOT-89
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Microchip TN2425N8-G technical specifications.
General
| Package/Case | SOT-89 |
| Continuous Drain Current (ID) | 480mA |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 3.5R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 200pF |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 3.5R |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TN2425N8-G Datasheet
Download the complete datasheet for Microchip TN2425N8-G to view detailed technical specifications.
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