N-channel power MOSFET featuring 18V drain-source breakdown voltage and 400mA continuous drain current. This surface-mount component offers a low 2.5-ohm drain-source resistance (Rds On Max) and 1.6W maximum power dissipation. Designed for efficient switching, it exhibits a 5ns turn-on delay and 15ns fall time, with an input capacitance of 110pF. Operating across a wide temperature range from -55°C to 150°C, it is packaged in a compact TO-243AA surface-mount case.
PackageTO-243AA
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Microchip TN2501N8-G technical specifications.
General
Package/Case
TO-243AA
Continuous Drain Current (ID)
400mA
Drain to Source Breakdown Voltage
18V
Drain to Source Resistance
2.5R
Fall Time
15ns
Gate to Source Voltage (Vgs)
15V
Height
1.6mm
Input Capacitance
110pF
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Rds On Max
2.5R
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
5ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN2501N8-G Datasheet
Download the complete datasheet for Microchip TN2501N8-G to view detailed technical specifications.
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