N-channel power MOSFET featuring 18V drain-source breakdown voltage and 400mA continuous drain current. This surface-mount component offers a low 2.5-ohm drain-source resistance (Rds On Max) and 1.6W maximum power dissipation. Designed for efficient switching, it exhibits a 5ns turn-on delay and 15ns fall time, with an input capacitance of 110pF. Operating across a wide temperature range from -55°C to 150°C, it is packaged in a compact TO-243AA surface-mount case.
PackageTO-243AA
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Microchip TN2501N8-G technical specifications.
General
| Package/Case | TO-243AA |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Breakdown Voltage | 18V |
| Drain to Source Resistance | 2.5R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 1.6mm |
| Input Capacitance | 110pF |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TN2501N8-G Datasheet
Download the complete datasheet for Microchip TN2501N8-G to view detailed technical specifications.
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