N-Channel Power MOSFET, SOT-89-3 package, featuring 40V drain-source breakdown voltage and 890mA continuous drain current. Offers 1 ohm drain-source resistance (Rds On Max) and 1.6W maximum power dissipation. Designed for surface mounting with a compact footprint (4.6mm L x 2.6mm W x 1.6mm H). Includes fast switching characteristics with 10ns turn-on/fall times and 25ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageSOT-89-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Microchip TN2504N8-G technical specifications.
General
Package/Case
SOT-89-3
Continuous Drain Current (ID)
890mA
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
1R
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
125pF
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Rds On Max
1R
RoHS Compliant
Yes
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN2504N8-G Datasheet
Download the complete datasheet for Microchip TN2504N8-G to view detailed technical specifications.
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