N-Channel Power MOSFET, SOT-89-3 package, featuring 40V drain-source breakdown voltage and 890mA continuous drain current. Offers 1 ohm drain-source resistance (Rds On Max) and 1.6W maximum power dissipation. Designed for surface mounting with a compact footprint (4.6mm L x 2.6mm W x 1.6mm H). Includes fast switching characteristics with 10ns turn-on/fall times and 25ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Microchip TN2504N8-G technical specifications.
| Package/Case | SOT-89-3 |
| Continuous Drain Current (ID) | 890mA |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 125pF |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
| RoHS | Compliant |
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