MICROCHIP

TN2510N8-G

Datasheet

100V 0.73A N-CH MOSFET, 1.5Ω RdsOn, TO-243AA, SMT

Microchip

TN2510N8-G

Name: TN2510N8-G Microchip
Brand: Microchip
SKU: TN2510N8-G

100V 0.73A N-CH MOSFET, 1.5Ω RdsOn, TO-243AA, SMT

N-Channel Power MOSFET, TO-243AA package, offering 100V drain-to-source breakdown voltage and 730mA continuous drain current. Features low 1.5 Ohm drain-to-source resistance, 125pF input capacitance, and fast switching with 10ns turn-on delay and 10ns fall time. Operates within a -55°C to 150°C temperature range with a maximum power dissipation of 1.6W. Designed for surface mount applications with lead-free construction.

PackageTO-243AA

MountingSurface Mount

PolarityN-CHANNEL

Power1.6W

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Technical Specifications

Microchip TN2510N8-G technical specifications.

General

Package/Case	TO-243AA
Continuous Drain Current (ID)	730mA
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	1.5R
Fall Time	10ns
Gate to Source Voltage (Vgs)	20V
Height	1.6mm
Input Capacitance	125pF
Lead Free	Lead Free
Length	4.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.6W
Mount	Surface Mount
Number of Channels	1
Number of Elements	1
Package Quantity	2000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	1.6W
Radiation Hardening	No
Rds On Max	1.5R
Turn-Off Delay Time	20ns
Turn-On Delay Time	10ns
Weight	0.001862oz
Width	2.6mm