N-channel small signal MOSFET in a TO-92 package, featuring a 400V drain-to-source breakdown voltage and 220mA continuous drain current. This through-hole mounted component offers a low 5Ω drain-to-source resistance and fast switching times with a 4ns turn-on delay and 20ns fall time. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 740mW and an input capacitance of 225pF. RoHS compliant.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Microchip TN2640N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
220mA
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
5R
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
225pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
740mW
Radiation Hardening
No
Rds On Max
5R
RoHS Compliant
Yes
Turn-Off Delay Time
20ns
Turn-On Delay Time
4ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN2640N3-G Datasheet
Download the complete datasheet for Microchip TN2640N3-G to view detailed technical specifications.
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