N-channel JFET designed for small signal applications. Features a 250V drain-to-source breakdown voltage and 215mA continuous drain current. Offers a low drain-to-source resistance of 7 Ohms. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-92-3 through-hole mount configuration. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 15ns.
PackageTO-92-3
MountingThrough Hole
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Microchip TN5325N3-G technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 215mA |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 7R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 110pF |
| Lead Free | Lead Free |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 740mW |
| Radiation Hardening | No |
| Rds On Max | 7R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.016oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TN5325N3-G Datasheet
Download the complete datasheet for Microchip TN5325N3-G to view detailed technical specifications.
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