N-channel JFET designed for small signal applications. Features a 250V drain-to-source breakdown voltage and 215mA continuous drain current. Offers a low drain-to-source resistance of 7 Ohms. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-92-3 through-hole mount configuration. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 15ns.
PackageTO-92-3
MountingThrough Hole
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Microchip TN5325N3-G technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
215mA
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
7R
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
110pF
Lead Free
Lead Free
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
740mW
Radiation Hardening
No
Rds On Max
7R
RoHS Compliant
Yes
Turn-Off Delay Time
25ns
Turn-On Delay Time
20ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip TN5325N3-G Datasheet
Download the complete datasheet for Microchip TN5325N3-G to view detailed technical specifications.
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