P-channel small signal MOSFET in a TO-92-3 package, featuring a continuous drain current of 430mA and a drain-to-source breakdown voltage of -40V. This through-hole mounted component offers a maximum power dissipation of 740mW, with an input capacitance of 150pF. Operating temperature range spans from -55°C to 150°C, with typical turn-on delay time of 5ns and fall time of 6ns.
PackageTO-92-3
MountingThrough Hole
PolarityP-CHANNEL
Power1W
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Technical Specifications
Microchip TP0604N3-G technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
430mA
Drain to Source Breakdown Voltage
-40V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
40V
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
150pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
2R
Turn-Off Delay Time
10ns
Turn-On Delay Time
5ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip TP0604N3-G Datasheet
Download the complete datasheet for Microchip TP0604N3-G to view detailed technical specifications.
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