MICROCHIP

TP0604N3-G

Datasheet

430mA, -40V P-CH JFET, TO-92, Through Hole

Microchip

TP0604N3-G

Name: TP0604N3-G Microchip
Brand: Microchip
SKU: TP0604N3-G

430mA, -40V P-CH JFET, TO-92, Through Hole

P-channel small signal MOSFET in a TO-92-3 package, featuring a continuous drain current of 430mA and a drain-to-source breakdown voltage of -40V. This through-hole mounted component offers a maximum power dissipation of 740mW, with an input capacitance of 150pF. Operating temperature range spans from -55°C to 150°C, with typical turn-on delay time of 5ns and fall time of 6ns.

PackageTO-92-3

MountingThrough Hole

PolarityP-CHANNEL

Power1W

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Technical Specifications

Microchip TP0604N3-G technical specifications.

General

Package/Case	TO-92-3
Continuous Drain Current (ID)	430mA
Drain to Source Breakdown Voltage	-40V
Drain to Source Resistance	2R
Drain to Source Voltage (Vdss)	40V
Fall Time	6ns
Gate to Source Voltage (Vgs)	20V
Height	5.33mm
Input Capacitance	150pF
Length	5.21mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	740mW
Mount	Through Hole
Number of Channels	1
Number of Elements	1
Package Quantity	1000
Packaging	Bulk
Polarity	P-CHANNEL
Power Dissipation	1W
Radiation Hardening	No
Rds On Max	2R
Turn-Off Delay Time	10ns
Turn-On Delay Time	5ns
Weight	0.016oz
Width	4.19mm