P-channel enhancement mode MOSFET featuring a -40V drain-source breakdown voltage and 2 Ohm drain-source resistance. This through-hole component offers a continuous drain current of -430mA and a maximum power dissipation of 1W. Ideal for applications requiring fast switching, it exhibits turn-on delay times of 5ns and fall times of 6ns. The TO-92 package is supplied on tape and reel.
PackageTO-92
MountingThrough Hole
PolarityP-CHANNEL
Power1W
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Technical Specifications
Microchip TP0604N3-P014 technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | -430mA |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.00776oz |
| Width | 4.19mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Microchip TP0604N3-P014 Datasheet
Download the complete datasheet for Microchip TP0604N3-P014 to view detailed technical specifications.
No datasheet is available for this part.