P-CHANNEL, Si, SMALL SIGNAL MOSFET, TO-92. Features 40V Drain to Source Breakdown Voltage and 175mA Continuous Drain Current. Offers 6 Ohms Drain to Source Resistance (Rds On Max). Operates within a -55°C to 150°C temperature range. Through-hole mounting in a TO-92-3 package.
PackageTO-92-3
MountingThrough Hole
PolarityP-CHANNEL
Power740mW
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Technical Specifications
Microchip TP2104N3-G technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 175mA |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 740mW |
| Rds On Max | 6R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 5ns |
| Turn-On Delay Time | 4ns |
| Weight | 0.016oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TP2104N3-G Datasheet
Download the complete datasheet for Microchip TP2104N3-G to view detailed technical specifications.
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