P-channel power MOSFET, surface mountable in a SOT-89-3 package. Features a -20V drain-to-source breakdown voltage and a continuous drain current of 630mA. Offers a low 2-ohm drain-to-source resistance. Operates with a gate-to-source voltage up to 20V and has a maximum power dissipation of 1.6W. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 11ns.
PackageSOT-89-3
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Microchip TP2502N8-G technical specifications.
General
Package/Case
SOT-89-3
Continuous Drain Current (ID)
630mA
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
-20V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.6W
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip TP2502N8-G Datasheet
Download the complete datasheet for Microchip TP2502N8-G to view detailed technical specifications.
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