P-channel power MOSFET, surface mountable in a SOT-89-3 package. Features a -20V drain-to-source breakdown voltage and a continuous drain current of 630mA. Offers a low 2-ohm drain-to-source resistance. Operates with a gate-to-source voltage up to 20V and has a maximum power dissipation of 1.6W. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 11ns.
PackageSOT-89-3
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Microchip TP2502N8-G technical specifications.
General
| Package/Case | SOT-89-3 |
| Continuous Drain Current (ID) | 630mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TP2502N8-G Datasheet
Download the complete datasheet for Microchip TP2502N8-G to view detailed technical specifications.
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