P-channel JFET with 350V drain-to-source breakdown voltage and 86mA continuous drain current. Features 25 Ohm drain-to-source resistance and 125pF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 740mW. Packaged in a TO-92-3 through-hole mount.
PackageTO-92-3
Resistance25R
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Microchip TP2535N3-G technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
86mA
Drain to Source Breakdown Voltage
-350V
Drain to Source Resistance
25R
Drain to Source Voltage (Vdss)
350V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
125pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Bulk
Polarity
P-CHANNEL
Power Dissipation
740mW
Rds On Max
25R
Resistance
25R
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip TP2535N3-G Datasheet
Download the complete datasheet for Microchip TP2535N3-G to view detailed technical specifications.
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