P-channel JFET with 350V drain-source breakdown voltage and 180mA continuous drain current. Features 15 Ohm drain-source resistance (Rds On Max) and 1W maximum power dissipation. This small signal transistor is housed in a TO-92-3 package for through-hole mounting. Operating temperature range spans from -55°C to 150°C, with typical turn-on delay of 10ns and fall time of 40ns.
PackageTO-92-3
MountingThrough Hole
PolarityP-CHANNEL
Power1W
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Technical Specifications
Microchip TP2635N3-G technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
180mA
Drain to Source Breakdown Voltage
-350V
Drain to Source Resistance
15R
Drain to Source Voltage (Vdss)
350V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
300pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Bulk
Polarity
P-CHANNEL
Power Dissipation
1W
Rds On Max
15R
Turn-Off Delay Time
60ns
Turn-On Delay Time
10ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip TP2635N3-G Datasheet
Download the complete datasheet for Microchip TP2635N3-G to view detailed technical specifications.
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