
P-channel JFET with 350V drain-source breakdown voltage and 180mA continuous drain current. Features 15 Ohm drain-source resistance (Rds On Max) and 1W maximum power dissipation. This small signal transistor is housed in a TO-92-3 package for through-hole mounting. Operating temperature range spans from -55°C to 150°C, with typical turn-on delay of 10ns and fall time of 40ns.
Microchip TP2635N3-G technical specifications.
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