P-channel JFET with 350V drain-source breakdown voltage and 180mA continuous drain current. Features 15 Ohm drain-source resistance (Rds On Max) and 1W maximum power dissipation. This small signal transistor is housed in a TO-92-3 package for through-hole mounting. Operating temperature range spans from -55°C to 150°C, with typical turn-on delay of 10ns and fall time of 40ns.
PackageTO-92-3
MountingThrough Hole
PolarityP-CHANNEL
Power1W
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Technical Specifications
Microchip TP2635N3-G technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 180mA |
| Drain to Source Breakdown Voltage | -350V |
| Drain to Source Resistance | 15R |
| Drain to Source Voltage (Vdss) | 350V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 300pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 15R |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.016oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TP2635N3-G Datasheet
Download the complete datasheet for Microchip TP2635N3-G to view detailed technical specifications.
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