P-channel Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a 400V drain-to-source breakdown voltage and 180mA continuous drain current. Offers a low drain-to-source resistance of 15 Ohms and a maximum power dissipation of 1W. Packaged in a TO-92-3 through-hole mount configuration, operating across a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 40ns.
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| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 180mA |
| Drain to Source Breakdown Voltage | -400V |
| Drain to Source Resistance | 15R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 300pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 15R |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.00776oz |
| Width | 4.19mm |
| RoHS | Compliant |
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