
P-channel Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a 400V drain-to-source breakdown voltage and 180mA continuous drain current. Offers a low drain-to-source resistance of 15 Ohms and a maximum power dissipation of 1W. Packaged in a TO-92-3 through-hole mount configuration, operating across a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 40ns.
Microchip TP2640N3-G technical specifications.
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