P-channel Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a 400V drain-to-source breakdown voltage and 180mA continuous drain current. Offers a low drain-to-source resistance of 15 Ohms and a maximum power dissipation of 1W. Packaged in a TO-92-3 through-hole mount configuration, operating across a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 40ns.
PackageTO-92-3
MountingThrough Hole
PolarityP-CHANNEL
Power1W
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Technical Specifications
Microchip TP2640N3-G technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
180mA
Drain to Source Breakdown Voltage
-400V
Drain to Source Resistance
15R
Drain to Source Voltage (Vdss)
400V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
300pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
15R
Turn-Off Delay Time
60ns
Turn-On Delay Time
10ns
Weight
0.00776oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip TP2640N3-G Datasheet
Download the complete datasheet for Microchip TP2640N3-G to view detailed technical specifications.
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