P-CHANNEL MOSFET, SOT-23-3 package, featuring a continuous drain current of 120mA and a drain-to-source breakdown voltage of -220V. This surface mount component offers a maximum power dissipation of 360mW and a drain-to-source resistance (Rds On Max) of 12 Ohms. Operating across a wide temperature range from -55°C to 150°C, it includes a gate-to-source voltage capability of 20V and input capacitance of 110pF. Switching characteristics include a turn-on delay time of 10ns and a fall time of 15ns.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power360mW
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Technical Specifications
Microchip TP5322K1-G technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
120mA
Drain to Source Breakdown Voltage
-220V
Drain to Source Resistance
12R
Drain to Source Voltage (Vdss)
-220V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
110pF
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
360mW
Rds On Max
12R
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Microchip TP5322K1-G Datasheet
Download the complete datasheet for Microchip TP5322K1-G to view detailed technical specifications.
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