N-channel, small-signal JFET in a TO-92 package, featuring 120V drain-to-source breakdown voltage and 230mA continuous drain current. Offers 6Ω drain-to-source resistance (Rds On Max) and 1W maximum power dissipation. Designed for through-hole mounting, this RoHS compliant component operates across a -55°C to 150°C temperature range with fast switching characteristics including 8ns turn-on delay and 12ns fall time.
PackageTO-92-3
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip VN1206L-G technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 230mA |
| Drain to Source Breakdown Voltage | 120V |
| Drain to Source Resistance | 6R |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.33mm |
| Input Capacitance | 125pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 6R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.016oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip VN1206L-G Datasheet
Download the complete datasheet for Microchip VN1206L-G to view detailed technical specifications.
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