N-channel small signal MOSFET in a TO-92-3 package, designed for through-hole mounting. Features a 100V drain-to-source breakdown voltage and a continuous drain current of 1.2A. Offers a low drain-to-source resistance of 4R and a maximum power dissipation of 1W. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with a 10ns turn-on delay and 30ns fall time.
PackageTO-92-3
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip VN2210N3-G technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 4R |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 500pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.016oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip VN2210N3-G Datasheet
Download the complete datasheet for Microchip VN2210N3-G to view detailed technical specifications.
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