N-channel small signal MOSFET in a TO-92-3 package, designed for through-hole mounting. Features a 100V drain-to-source breakdown voltage and a continuous drain current of 1.2A. Offers a low drain-to-source resistance of 4R and a maximum power dissipation of 1W. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with a 10ns turn-on delay and 30ns fall time.
PackageTO-92-3
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip VN2210N3-G technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
1.2A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
4R
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
500pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
350mR
RoHS Compliant
Yes
Turn-Off Delay Time
50ns
Turn-On Delay Time
10ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip VN2210N3-G Datasheet
Download the complete datasheet for Microchip VN2210N3-G to view detailed technical specifications.
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