N-channel small signal MOSFET in a TO-92 package, featuring a 600V drain-to-source breakdown voltage and 160mA continuous drain current. This through-hole component offers a 20 Ohm drain-to-source resistance, with turn-on delay time of 10ns and fall time of 20ns. Maximum power dissipation is 1W, operating between -55°C and 150°C.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip VN2460N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
160mA
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
20R
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
150pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
20R
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.00776oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip VN2460N3-G Datasheet
Download the complete datasheet for Microchip VN2460N3-G to view detailed technical specifications.
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