
N-channel small signal MOSFET in a TO-92 package, featuring a 600V drain-to-source breakdown voltage and 160mA continuous drain current. This through-hole component offers a 20 Ohm drain-to-source resistance, with turn-on delay time of 10ns and fall time of 20ns. Maximum power dissipation is 1W, operating between -55°C and 150°C.
Microchip VN2460N3-G technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 160mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 20R |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 150pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 20R |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.00776oz |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip VN2460N3-G to view detailed technical specifications.
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