N-channel power MOSFET in TO-243AA package, featuring 600V drain-to-source breakdown voltage and 200mA continuous drain current. Offers 20 Ohm drain-to-source resistance (Rds On Max) and 1.6W maximum power dissipation. Designed for surface mount applications with a 150°C maximum operating temperature and 10ns turn-on delay.
PackageTO-243AA
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Microchip VN2460N8-G technical specifications.
General
Package/Case
TO-243AA
Continuous Drain Current (ID)
200mA
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
20R
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
150pF
Lead Free
Lead Free
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Rds On Max
20R
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip VN2460N8-G Datasheet
Download the complete datasheet for Microchip VN2460N8-G to view detailed technical specifications.
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