
N-channel power MOSFET in TO-243AA package, featuring 600V drain-to-source breakdown voltage and 200mA continuous drain current. Offers 20 Ohm drain-to-source resistance (Rds On Max) and 1.6W maximum power dissipation. Designed for surface mount applications with a 150°C maximum operating temperature and 10ns turn-on delay.
Microchip VN2460N8-G technical specifications.
| Package/Case | TO-243AA |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 20R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 20R |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip VN2460N8-G to view detailed technical specifications.
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