N-channel silicon MOSFET, 50V drain-to-source breakdown voltage, 1.2A continuous drain current, and 300mΩ drain-to-source resistance. Features include 10ns turn-on delay, 25ns fall time, and 300pF input capacitance. This through-hole component is housed in a TO-92 package, rated for 1W maximum power dissipation, and operates from -55°C to 150°C. It is lead-free and RoHS compliant.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip VN3205N3-G technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 300mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.016oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip VN3205N3-G Datasheet
Download the complete datasheet for Microchip VN3205N3-G to view detailed technical specifications.
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