N-channel silicon MOSFET, 50V drain-to-source breakdown voltage, 1.2A continuous drain current, and 300mΩ drain-to-source resistance. Features include 10ns turn-on delay, 25ns fall time, and 300pF input capacitance. This through-hole component is housed in a TO-92 package, rated for 1W maximum power dissipation, and operates from -55°C to 150°C. It is lead-free and RoHS compliant.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power1W
Quick Jump:
Technical Specifications
Microchip VN3205N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
1.2A
Drain to Source Breakdown Voltage
50V
Drain to Source Resistance
300mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
300pF
Lead Free
Lead Free
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
300mR
RoHS Compliant
Yes
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip VN3205N3-G Datasheet
Download the complete datasheet for Microchip VN3205N3-G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
