P-Channel MOSFET, designed for through-hole mounting in a TO-92 package. Features a drain-source breakdown voltage of -60V and a continuous drain current of 250mA. Offers a low on-resistance of 8 Ohms and a maximum power dissipation of 1W. Operates across a wide temperature range from -55°C to 150°C, with fast switching times including 4ns turn-on and fall times.
PackageTO-92
MountingThrough Hole
PolarityP-CHANNEL
Power740mW
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Technical Specifications
Microchip VP0106N3-G technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 250mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 60pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 740mW |
| Radiation Hardening | No |
| Rds On Max | 8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 4ns |
| Weight | 0.016oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip VP0106N3-G Datasheet
Download the complete datasheet for Microchip VP0106N3-G to view detailed technical specifications.
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