P-CHANNEL JFET with 250mA continuous drain current and -90V drain-to-source breakdown voltage. Features 8Ω drain-to-source resistance and 90V drain-to-source voltage. Operates across a -55°C to 150°C temperature range with 1W maximum power dissipation. Packaged in TO-92 for through-hole mounting.
PackageTO-92
MountingThrough Hole
PolarityP-CHANNEL
Power1W
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Technical Specifications
Microchip VP0109N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
250mA
Drain to Source Breakdown Voltage
-90V
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
90V
Fall Time
4ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
60pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
8R
Turn-Off Delay Time
8ns
Turn-On Delay Time
4ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip VP0109N3-G Datasheet
Download the complete datasheet for Microchip VP0109N3-G to view detailed technical specifications.
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