
P-channel JFET with 500V drain-source breakdown voltage and 54mA continuous drain current. Features 125 Ohms drain-source resistance (Rds On Max) and 1W power dissipation. Operates across a -55°C to 150°C temperature range. TO-92 package for through-hole mounting, with 70pF input capacitance and 5ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microchip VP0550N3-G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 54mA |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 125R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 70pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 125R |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.016oz |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip VP0550N3-G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
