P-CHANNEL, small signal MOSFET in a TO-236AB (SOT-23) surface mount package. Features 100V drain-to-source breakdown voltage (Vdss), 120mA continuous drain current (ID), and 12 Ohm drain-to-source resistance (Rds On Max). Offers fast switching with 4ns turn-on delay and 5ns fall time, and a 60pF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 360mW.
PackageSOT-23
MountingSurface Mount
PolarityP-CHANNEL
Power360mW
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Technical Specifications
Microchip VP2110K1-G technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
120mA
Drain to Source Breakdown Voltage
-100V
Drain to Source Resistance
12R
Drain to Source Voltage (Vdss)
100V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
60pF
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
360mW
Radiation Hardening
No
Rds On Max
12R
Turn-Off Delay Time
5ns
Turn-On Delay Time
4ns
Weight
0.050717oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Microchip VP2110K1-G Datasheet
Download the complete datasheet for Microchip VP2110K1-G to view detailed technical specifications.
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