This 1GB DDR DRAM IC from Micron features 134 terminals positioned on the bottom, packaged in a 10mm wide by 11.5mm long VFBGA. It operates within a supply voltage range of 1.14V to 1.2V and 1.2V to 1.3V. The device has a single function and port, with a memory capacity of 67108864 words and 64000000 words code.
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Technical Specifications
Micron EDB1316BDBH-1DAAT-F-R technical specifications.
General
| Number of Terminals | 134 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B134 |
| Width | 10 |
| Length | 11.5 |
| Number of Functions | 1 |
| Supply Voltage-Nom (Vsup) | 1.2 |
| Supply Voltage-Max (Vsup) | 1.3 |
| Supply Voltage-Min (Vsup) | 1.14 |
| Number of Words | 67108864 |
| Number of Words Code | 64000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Micron EDB1316BDBH-1DAAT-F-R Datasheet
Download the complete datasheet for Micron EDB1316BDBH-1DAAT-F-R to view detailed technical specifications.
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