This 216-pin VFBGA DDR DRAM from Micron operates within a supply voltage range of 1.14V to 1.3V, with a nominal voltage of 1.2V. It features a single port and a memory capacity of 134217728 words, with a code capacity of 128000000 words. The device is designed for use in memory applications and is packaged in a 12x12mm VFBGA package.
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Technical Specifications
Micron EDB8164B4PT-1D-F-R technical specifications.
General
| Number of Terminals | 216 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | S-PBGA-B216 |
| Width | 12 |
| Length | 12 |
| Number of Functions | 1 |
| Supply Voltage-Nom (Vsup) | 1.2 |
| Supply Voltage-Max (Vsup) | 1.3 |
| Supply Voltage-Min (Vsup) | 1.14 |
| Number of Words | 134217728 |
| Number of Words Code | 128000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Micron EDB8164B4PT-1D-F-R Datasheet
Download the complete datasheet for Micron EDB8164B4PT-1D-F-R to view detailed technical specifications.
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