512K-bit NOR Flash memory with a parallel interface, featuring a 64K x 8 architecture and 100ns maximum access time. This asynchronous memory operates at 5V with a maximum current of 30mA and requires a programming voltage of 11.4-12.6V. Housed in a 32-pin PDIP through-hole package with a 2.54mm pin pitch, it supports a 16-bit address bus and 8-bit data bus, operating within a temperature range of 0°C to 70°C.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Micron M28F512-10B1 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
DIP
Package/Case
PDIP
Package Description
Plastic Dual In Line Package
Lead Shape
Through Hole
Pin Count
32
PCB
32
Package Length (mm)
42.04(Max)
Package Width (mm)
13.84(Max)
Package Height (mm)
4.06(Max)
Seated Plane Height (mm)
5.08(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
MO-015AP
Density
512Kbit
Interface Type
Parallel
Maximum Operating Current
30mA
Architecture
Non Sectored
Programming Voltage
11.4 to 12.6V
Timing Type
Asynchronous
Maximum Access Time
100ns
Number of Words
64K
Boot Block
No
Typical Operating Supply Voltage
5V
Address Bus Width
16bit
Number of Bits per Word
8bit
Min Operating Temperature
0°C
Max Operating Temperature
70°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron M28F512-10B1 Datasheet
Download the complete datasheet for Micron M28F512-10B1 to view detailed technical specifications.
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