16M-bit NOR Flash memory with a parallel interface, featuring a 1M x 16 word organization and 20-bit address bus. This component offers a maximum access time of 90 ns and operates with typical supply voltages of 3V or 3.3V, with programming voltages ranging from 2.7 to 3.6V or 11.4 to 12.6V. Packaged in a 46-pin TFBGA with a 0.75mm pin pitch, it supports surface mounting and has an operating temperature range of -40°C to 85°C. The memory architecture is sectored with an asymmetrical block organization and includes a top boot block.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron M28W160BT90ZB6 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
46
PCB
46
Package Length (mm)
6.39
Package Width (mm)
6.37
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1(Max)
Pin Pitch (mm)
0.75
Package Material
Plastic
Mounting
Surface Mount
Density
16Mbit
Interface Type
Parallel
Maximum Operating Current
20mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6|11.4 to 12.6V
Timing Type
Asynchronous
Maximum Access Time
90ns
Number of Words
1M
Boot Block
Yes
Typical Operating Supply Voltage
3|3.3V
Address Bus Width
20bit
Location of Boot Block
Top
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron M28W160BT90ZB6 Datasheet
Download the complete datasheet for Micron M28W160BT90ZB6 to view detailed technical specifications.
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