
32M-bit NOR Flash memory with a parallel interface, featuring 2M x 16 words and a maximum access time of 70ns. This integrated circuit operates at 3V/3.3V typical supply voltage, with programming voltages ranging from 2.7 to 3.6V and 11.4 to 12.6V. Packaged in a 64-pin Thin Profile Ball Grid Array (TBGA) with a 1mm pin pitch, it supports surface mounting. The memory architecture is sectored with asymmetrical block organization and includes a bottom boot block.
Micron M28W320FSB70ZA1F technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TBGA |
| Package Description | Thin Profile Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 64 |
| PCB | 64 |
| Package Length (mm) | 13 |
| Package Width (mm) | 10 |
| Package Height (mm) | 0.85(Max) |
| Seated Plane Height (mm) | 0.85(Max) |
| Pin Pitch (mm) | 1 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 32Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 18mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 2.7 to 3.6|11.4 to 12.6V |
| Timing Type | Asynchronous |
| Maximum Access Time | 70ns |
| Number of Words | 2M |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3|3.3V |
| Address Bus Width | 21bit |
| Location of Boot Block | Bottom |
| Number of Bits per Word | 16bit |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
| Cage Code | 6Y440 |
| EU RoHS | Yes |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Micron M28W320FSB70ZA1F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.