64M-bit NOR Flash memory with a parallel interface, offering 4M x 16 organization and an 85ns maximum access time. This surface-mount component features a 48-pin Thin Fine Pitch Ball Grid Array (TFBGA) package with a 0.75mm pin pitch. It operates at a typical 3.3V supply voltage, with a maximum operating current of 18mA, and supports programming voltages from 1.65 to 3.6V and 11.4 to 12.6V. The memory architecture is sectored and asymmetrical, including a bottom boot block, and operates within a temperature range of 0°C to 70°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron M28W640ECB85ZB1S technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
48
PCB
48
Package Length (mm)
10.5
Package Width (mm)
6.39
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1(Max)
Pin Pitch (mm)
0.75
Package Material
Plastic
Mounting
Surface Mount
Density
64Mbit
Interface Type
Parallel
Maximum Operating Current
18mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.65 to 3.6|11.4 to 12.6V
Timing Type
Asynchronous
Maximum Access Time
85ns
Number of Words
4M
Boot Block
Yes
Typical Operating Supply Voltage
3.3V
Address Bus Width
22bit
Location of Boot Block
Bottom
Number of Bits per Word
16bit
Min Operating Temperature
0°C
Max Operating Temperature
70°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron M28W640ECB85ZB1S Datasheet
Download the complete datasheet for Micron M28W640ECB85ZB1S to view detailed technical specifications.
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