64M-bit NOR Flash memory with a parallel interface, featuring a 4M x 16 word organization and 22-bit address bus. This surface-mount component offers a 100ns maximum access time and operates at a typical 3.3V supply voltage, with programming voltages ranging from 1.65-3.6V and 11.4-12.6V. The memory utilizes an asymmetrical, sectored architecture with a top boot block. Housed in a 48-pin Thin Fine Pitch Ball Grid Array (TFBGA) package measuring 10.5mm x 6.39mm with a 0.75mm pin pitch, it operates across a temperature range of -40°C to 85°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron M28W640ECT10ZB6E technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
48
PCB
48
Package Length (mm)
10.5
Package Width (mm)
6.39
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1(Max)
Pin Pitch (mm)
0.75
Package Material
Plastic
Mounting
Surface Mount
Density
64Mbit
Interface Type
Parallel
Maximum Operating Current
18mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.65 to 3.6|11.4 to 12.6V
Timing Type
Asynchronous
Maximum Access Time
100ns
Number of Words
4M
Boot Block
Yes
Typical Operating Supply Voltage
3.3V
Address Bus Width
22bit
Location of Boot Block
Top
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron M28W640ECT10ZB6E Datasheet
Download the complete datasheet for Micron M28W640ECT10ZB6E to view detailed technical specifications.
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