64M-bit NOR Flash memory with a parallel interface, featuring a 4M x 16 word organization and 22-bit address bus. This surface-mount component offers a 100ns maximum access time and operates at a typical 3.3V supply voltage, with programming voltages ranging from 1.65-3.6V and 11.4-12.6V. The memory utilizes an asymmetrical, sectored architecture with a top boot block. Housed in a 48-pin Thin Fine Pitch Ball Grid Array (TFBGA) package measuring 10.5mm x 6.39mm with a 0.75mm pin pitch, it operates across a temperature range of -40°C to 85°C.
Micron M28W640ECT10ZB6E technical specifications.
Download the complete datasheet for Micron M28W640ECT10ZB6E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.