32M-bit NOR Flash memory, featuring a parallel interface and 90ns maximum access time. This component offers 4M x 8 or 2M x 16 word configurations with an asymmetrical block architecture and boot block capability. It operates from a 3.3V supply voltage, with programming voltages ranging from 2.7 to 3.6V and 11.5 to 12.5V. Packaged in a 48-pin TFBGA with a 0.8mm pin pitch, it supports surface mounting and operates within a temperature range of 0°C to 70°C.
PackageTFBGA
MountingSurface Mount
Quick Jump:
Technical Specifications
Micron M29DW323DT90ZE1E technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TFBGA |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 48 |
| PCB | 48 |
| Package Length (mm) | 8 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.9(Max) |
| Pin Pitch (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 32Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 10mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 2.7 to 3.6|11.5 to 12.5V |
| Timing Type | Asynchronous |
| Maximum Access Time | 90ns |
| Number of Words | 4M/2M |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3.3V |
| Address Bus Width | 22/21bit |
| Location of Boot Block | Top |
| Number of Bits per Word | 8/16bit |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
Compliance
| Cage Code | 6Y440 |
| EU RoHS | Yes |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Micron M29DW323DT90ZE1E Datasheet
Download the complete datasheet for Micron M29DW323DT90ZE1E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.