32M-bit NOR Flash memory with parallel interface, featuring 4M x 8 or 2M x 16 word organization and 70ns maximum access time. This surface-mount component utilizes a 63-pin Thin Fine Pitch Ball Grid Array (TFBGA) package measuring 11mm x 7mm x 0.9mm with a 0.8mm pin pitch. It operates from a 3.3V supply, with programming voltages ranging from 2.7V to 3.6V and 11.5V to 12.5V. The memory architecture is sectored with asymmetrical block organization and includes a bottom boot block. Operating temperature range is -40°C to 85°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron M29DW324DB70ZA6T technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
63
PCB
63
Package Length (mm)
11
Package Width (mm)
7
Package Height (mm)
0.9(Max)
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
32Mbit
Interface Type
Parallel
Maximum Operating Current
10mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6|11.5 to 12.5V
Timing Type
Asynchronous
Maximum Access Time
70ns
Number of Words
4M/2M
Boot Block
Yes
Typical Operating Supply Voltage
3.3V
Address Bus Width
22/21bit
Location of Boot Block
Bottom
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Micron M29DW324DB70ZA6T Datasheet
Download the complete datasheet for Micron M29DW324DB70ZA6T to view detailed technical specifications.
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