2M-bit NOR Flash memory with a parallel interface, featuring 256K x 8 organization and 55ns maximum access time. This asynchronous memory operates at 5V, with a programming voltage range of 4.5 to 5.5V. The component utilizes a sectored architecture with an 18-bit address bus and an 8-bit data bus, including a top-located boot block. Housed in a 32-pin PDIP through-hole package (MO-015AP), it offers a maximum operating current of 15mA and operates across an extended temperature range of -40°C to 125°C.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Micron M29F002BNT55P3 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
DIP
Package/Case
PDIP
Package Description
Plastic Dual In Line Package
Lead Shape
Through Hole
Pin Count
32
PCB
32
Package Length (mm)
42.04(Max)
Package Width (mm)
13.84(Max)
Package Height (mm)
4.06(Max)
Seated Plane Height (mm)
5.08(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
MO-015AP
Density
2Mbit
Interface Type
Parallel
Maximum Operating Current
15mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
4.5 to 5.5V
Timing Type
Asynchronous
Maximum Access Time
55ns
Number of Words
256K
Boot Block
Yes
Typical Operating Supply Voltage
5V
Address Bus Width
18bit
Location of Boot Block
Top
Number of Bits per Word
8bit
Min Operating Temperature
-40°C
Max Operating Temperature
125°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron M29F002BNT55P3 Datasheet
Download the complete datasheet for Micron M29F002BNT55P3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.