8M-bit NOR Flash memory with a parallel interface, featuring 1M x 8 or 512K x 16 word organization and a maximum access time of 55 ns. This asynchronous memory operates from a 4.5 to 5.5 V programming voltage, with a typical supply voltage of 5 V. The component is housed in a 44-pin SO (Small Outline IC) package with gull-wing leads for surface mounting, measuring 28.2 mm in length and 13.3 mm in width. It supports a 20/19-bit address bus and includes a bottom boot block. Operating temperature range is -40 °C to 85 °C.
PackageSO
MountingSurface Mount
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Technical Specifications
Micron M29F800DB55M6T technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SO
Package Description
Small Outline IC
Lead Shape
Gull-wing
Pin Count
44
PCB
44
Package Length (mm)
28.2
Package Width (mm)
13.3
Package Height (mm)
2.3
Seated Plane Height (mm)
2.8(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Density
8Mbit
Interface Type
Parallel
Maximum Operating Current
20mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
4.5 to 5.5V
Timing Type
Asynchronous
Maximum Access Time
55ns
Number of Words
1M/512K
Boot Block
Yes
Typical Operating Supply Voltage
5V
Address Bus Width
20/19bit
Location of Boot Block
Bottom
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320071
Schedule B
8542320070
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron M29F800DB55M6T Datasheet
Download the complete datasheet for Micron M29F800DB55M6T to view detailed technical specifications.
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