8M-bit NOR Flash memory with parallel interface, featuring 1M x 8 or 512K x 16 organization. Offers a maximum access time of 55 ns and operates from a 4.5 to 5.5 V programming voltage, with a typical operating supply voltage of 5 V. Packaged in a 48-pin TFBGA (Thin Fine Pitch Ball Grid Array) with a 0.8 mm pin pitch, suitable for surface mounting. Includes asymmetrical, sectored architecture with a bottom boot block and operates across a temperature range of -40 °C to 85 °C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron M29F800DB55ZA6T technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
48
PCB
48
Package Length (mm)
9
Package Width (mm)
6
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1(Max)
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
8Mbit
Interface Type
Parallel
Maximum Operating Current
20mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
4.5 to 5.5V
Timing Type
Asynchronous
Maximum Access Time
55ns
Number of Words
1M/512K
Boot Block
Yes
Typical Operating Supply Voltage
5V
Address Bus Width
20/19bit
Location of Boot Block
Bottom
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320071
Schedule B
8542320070
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron M29F800DB55ZA6T Datasheet
Download the complete datasheet for Micron M29F800DB55ZA6T to view detailed technical specifications.
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