8M-bit NOR Flash memory, 1M x 8 / 512K x 16 organization, featuring a parallel interface and 70ns maximum access time. This surface-mount component operates from a 4.5 to 5.5V supply, with a typical operating voltage of 5V. The memory utilizes a sectored architecture with an asymmetrical block organization and a top boot block. Housed in a 48-pin TFBGA package measuring 9mm x 6mm x 1mm with a 0.8mm pin pitch, it supports 20/19-bit address bus width and operates within a 0°C to 70°C temperature range.
Micron M29F800DT70ZA1T technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TFBGA |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 48 |
| PCB | 48 |
| Package Length (mm) | 9 |
| Package Width (mm) | 6 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1(Max) |
| Pin Pitch (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 8Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 20mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 4.5 to 5.5V |
| Timing Type | Asynchronous |
| Maximum Access Time | 70ns |
| Number of Words | 1M/512K |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 5V |
| Address Bus Width | 20/19bit |
| Location of Boot Block | Top |
| Number of Bits per Word | 8/16bit |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
| Cage Code | 6Y440 |
| EU RoHS | No |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Micron M29F800DT70ZA1T to view detailed technical specifications.
No datasheet is available for this part.