64M-bit NOR Flash memory with a parallel interface, featuring 70ns maximum access time. This component offers 8M x 8 or 4M x 16 word organization and operates at a typical 3.3V supply voltage, with a programming voltage range of 2.7V to 3.6V and 12V. The TFBGA package, measuring 11mm x 7mm x 0.9mm with a 0.8mm pin pitch, supports surface mounting and includes a bottom boot block. Operating across a temperature range of -40°C to 85°C, it consumes a maximum of 10mA.
Micron M29W640DB70ZA6 technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TFBGA |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 63 |
| PCB | 63 |
| Package Length (mm) | 11 |
| Package Width (mm) | 7 |
| Package Height (mm) | 0.9(Max) |
| Seated Plane Height (mm) | 0.9(Max) |
| Pin Pitch (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 64Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 10mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 2.7 to 3.6|12V |
| Timing Type | Asynchronous |
| Maximum Access Time | 70ns |
| Number of Words | 8M/4M |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3.3V |
| Address Bus Width | 23/22bit |
| Location of Boot Block | Bottom |
| Number of Bits per Word | 8/16bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Cage Code | 6Y440 |
| EU RoHS | No |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Micron M29W640DB70ZA6 to view detailed technical specifications.
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