64M-bit NOR Flash memory with a parallel interface, offering 8M x 8 or 4M x 16 word configurations. Features a 70ns maximum access time and operates at a typical 3.3V supply voltage, with a programming voltage range of 2.7V to 3.6V and 12V. Packaged in a 63-pin TFBGA with a 0.8mm pin pitch, this surface-mount component boasts asymmetrical sectored architecture and a bottom boot block. Operating temperature range is -40°C to 85°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron M29W640DB70ZA6T technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
63
PCB
63
Package Length (mm)
11
Package Width (mm)
7
Package Height (mm)
0.9(Max)
Seated Plane Height (mm)
0.9(Max)
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
64Mbit
Interface Type
Parallel
Maximum Operating Current
10mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6|12V
Timing Type
Asynchronous
Maximum Access Time
70ns
Number of Words
8M/4M
Boot Block
Yes
Typical Operating Supply Voltage
3.3V
Address Bus Width
23/22bit
Location of Boot Block
Bottom
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Micron M29W640DB70ZA6T Datasheet
Download the complete datasheet for Micron M29W640DB70ZA6T to view detailed technical specifications.
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