
64M-bit NOR Flash memory with parallel interface, featuring 8M x 8 or 4M x 16 word organization and a 90ns maximum access time. This surface-mount component utilizes a 63-pin Thin Fine Pitch Ball Grid Array (TFBGA) package with a 0.8mm pin pitch. It operates from 3V or 3.3V supply voltages, with programming voltages ranging from 2.7 to 3.6V and 11.5 to 12.5V. The memory architecture is sectored and asymmetrical, with a bottom boot block and an address bus width of 23/22 bits. Operating temperature range is -40°C to 85°C.
Micron M29W640DB90ZA6E technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TFBGA |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 63 |
| PCB | 63 |
| Package Length (mm) | 11 |
| Package Width (mm) | 7 |
| Package Height (mm) | 0.9(Max) |
| Seated Plane Height (mm) | 0.9(Max) |
| Pin Pitch (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 64Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 10mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 2.7 to 3.6|11.5 to 12.5V |
| Timing Type | Asynchronous |
| Maximum Access Time | 90ns |
| Number of Words | 8M/4M |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3|3.3V |
| Address Bus Width | 23/22bit |
| Location of Boot Block | Bottom |
| Number of Bits per Word | 8/16bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Cage Code | 6Y440 |
| EU RoHS | Yes |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Micron M29W640DB90ZA6E to view detailed technical specifications.
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