64M-bit NOR Flash memory with parallel interface, featuring 8M x 8 or 4M x 16 word organization and a 90ns maximum access time. This surface-mount component utilizes a 64-pin Fine Pitch Ball Grid Array (FBGA) package with a 1mm pin pitch. It operates from 3V/3.3V typical supply voltage, with programming voltages ranging from 2.7V to 3.6V and 11.5V to 12.5V. The memory architecture is sectored with asymmetrical block organization and a bottom boot block.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Micron M29W640GB90ZS6E technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | FBGA |
| Package Description | Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 64 |
| PCB | 64 |
| Package Length (mm) | 13 |
| Package Width (mm) | 11 |
| Package Height (mm) | 0.8 |
| Seated Plane Height (mm) | 1.4(Max) |
| Pin Pitch (mm) | 1 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 64Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 10mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 2.7 to 3.6|11.5 to 12.5V |
| Timing Type | Asynchronous |
| Maximum Access Time | 90ns |
| Number of Words | 8M/4M |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3|3.3V |
| Address Bus Width | 23/22bit |
| Location of Boot Block | Bottom |
| Number of Bits per Word | 8/16bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | 6Y440 |
| EU RoHS | Yes |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Micron M29W640GB90ZS6E Datasheet
Download the complete datasheet for Micron M29W640GB90ZS6E to view detailed technical specifications.
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